1060nm high-power broadband InGaAs/GaAs quantum well thyristor-laser

Broadband spectrum is observed in 1060nm InGaAs/GaAs thyristor-lasers with two different structures PiNiN and PNiN. In this paper, we experimentally investigate and compare the performance of these two structures.

The experimental results show that the PiNiN structure thyristor-laser with a reversed tunneling junction and two active regions, achieves a high power emitting with 790 mW and spectral range of ∼51nm.

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